Memory Design Engineer (职位编号:J10531)
长江存储科技有限责任公司
- 公司规模:5000-10000人
- 公司性质:国企
- 公司行业:电子技术/半导体/集成电路
职位信息
- 发布日期:2020-03-18
- 工作地点:北京-海淀区
- 招聘人数:若干人
- 工作经验:3-4年经验
- 学历要求:硕士
- 职位月薪:25-60万/年
- 职位类别:半导体技术
职位描述
工作职责:
1.Design memory related blocks including page buffer, regulator,high voltage switch;
2. Design system spec and integrate chip level circuit;
2. Communicate with layout engineers to make sure the quality of hold chip floorplan layout work;
3. Work with other team member to make sure the quality of chip level integration;
4. Train new employee;
任职资格:
1 . Master degree or above in related fields such electrical engineering, computer science, physics and etc;
2. At least 3 years’ experience in designing following circuitry or system: NAND/NOR FLASH, DDR, SRAM, SSD and etc;
3. Solid knowledge of basic memory design and good understanding of memory device and system;
4. Experience in verification and debugging skills; advanced knowledge of Cadence design tools;
5. Excellent communication skills and team work spirit;
职能类别:半导体技术
公司介绍
联系方式
- 公司地址:东湖新技术开发区未来三路88号