东莞招聘

Job description:

This contributor will work on the design, test and characterization of power devices fabricated on GaN-on-Si HEMT technology. The job responsibilities include:

1. Design of GaN semiconductor products for power applications.

2. Mask layout design and tapeout implementation

3. Process flow design and setup and co-work with process engineers for device fabrication

4. Plan, coordinate and evaluate process experiments (including DOE’s)

5. Device characterization including DC and dynamic analysis to optimize device design

6. Identify potential performance, manufacturing, testing, and reliability concerns and opportunities for improvement

Minimum Requirements:

Master or PhD in Electronic Engineering, Engineering Physics or a related engineering degree

Practice Experience on power devices (GaN-on-Si power device preferred)

Preferred Qualifications and Skills:

1. Deep understanding of power device physics

2. Experience on power device design, fabrication and characterization

3. Working experience with keysight B1505 and B1500 measurement platforms

4. Experience on device TCAD simulators

5. Demonstrated ability to work within schedule constraints

6. Excellent communication and team skills

7. Technical documentation experience

英诺赛科（珠海）科技有限公司一期项目坐落于珠海市国家高新区，拥有中国首条 8 英寸硅基氮化镓外延与芯片大规模量产生产线。
公司成立于 2015 年 12 月，由海归团队发起，主要业务为第三代半导体电力电子器件研发和生产。当前产品涵盖 30V-650V 氮化镓功率器件及 5G 射频器件，产品设计及性能均已达到国际先进水平。
此外，公司与欧洲微电子所（IMEC）、香港科技大学、电子科技大学等海内外科研机构、高 校已建立长期合作关系，在氮化镓外延生长、制造、可靠性、氮化镓器件与集成电路等领域持续开拓创新。