东莞招聘

Job description:

This contributor will work on the design, test and characterization of active and passive devices using GaN HEMT technology. The job responsibilities include:

1. Design of discrete and MMIC GaN based transistors for high power amplifier application. Passive components - capacitor and inductor design

2. Mask layout design and tapeout implementation

3. Plan, coordinate and evaluate process experiments (including DOE’s)

4. Process flow design and setup and co-work with process engineers to fabricate this design

5. Device characterization including DC and dynamic analysis, s-parameter, large signal, load-pull to optimize device design

6. Identify potential performance, manufacturing, testing, and reliability concerns and opportunities for improvement

Minimum Requirements:

Master or PhD in Electronic Engineering, Engineering Physics or a related engineering degree

Practice experience on GaN or LDMOS RF devices

Preferred Qualifications and Skills:

1. Deep understanding of GaN RF device physics

2. Experience on GaN on Silicon device design, fabrication and characterization

3. Working experience with microwave test equipment (e.g. VNAs) and standard device characterization/de-embedding techniques

4. Experience on large-signal load-pull measurement

5. Experience on HFSS electromagnetic modeling software and ADS non-linear circuit simulators

6. Demonstrated ability to work within schedule constraints

7. Excellent communication and team skills

8. Technical documentation experience

英诺赛科（珠海）科技有限公司一期项目坐落于珠海市国家高新区，拥有中国首条 8 英寸硅基氮化镓外延与芯片大规模量产生产线。
公司成立于 2015 年 12 月，由海归团队发起，主要业务为第三代半导体电力电子器件研发和生产。当前产品涵盖 30V-650V 氮化镓功率器件及 5G 射频器件，产品设计及性能均已达到国际先进水平。
此外，公司与欧洲微电子所（IMEC）、香港科技大学、电子科技大学等海内外科研机构、高 校已建立长期合作关系，在氮化镓外延生长、制造、可靠性、氮化镓器件与集成电路等领域持续开拓创新。