GaN IC Design R&D Engineer
英诺赛科(珠海)科技有限公司
- 公司规模:500-1000人
- 公司性质:合资
- 公司行业:电子技术/半导体/集成电路
职位信息
- 发布日期:2020-09-12
- 工作地点:珠海-珠海高新区
- 招聘人数:若干人
- 工作经验:无需经验
- 学历要求:硕士
- 职位月薪:1.2-2万/月
- 职位类别:集成电路IC设计/应用工程师
职位描述
Job description:
This contributor will work on the development and implementation of GaN monolithic power integrated circuit. The job responsibilities include:
1. Ability to build a preliminary PDK for GaN monolithic IC design
2. Design & execute GaN IC functional blocks for power applications
3. Co-work with device / process engineers to fabricate this design
4. Design and build test systems to functionally characterize GaN ICs
5. Analyze device data and test structures to optimize device design
6. Identify potential performance, manufacturing, testing, and reliability concerns and opportunities for improvement
Minimum Requirements:
MS or PhD in Electronic Engineering, Engineering Physics or a related engineering degree
Experience on power IC design
Preferred Qualifications and Skills:
1. Familiarize the whole picture of design and fabricate power IC
2. Deep understanding of power IC design
3. Experience on GaN power product is preferred
4. Expertise in power IC and device characterization
5. Demonstrated ability to work within schedule constraints
6. Excellent communication and team skills
7. Technical documentation experience
职能类别:集成电路IC设计/应用工程师
公司介绍
公司成立于 2015 年 12 月,由海归团队发起,主要业务为第三代半导体电力电子器件研发和生产。当前产品涵盖 30V-650V 氮化镓功率器件及 5G 射频器件,产品设计及性能均已达到国际先进水平。
此外,公司与欧洲微电子所(IMEC)、香港科技大学、电子科技大学等海内外科研机构、高 校已建立长期合作关系,在氮化镓外延生长、制造、可靠性、氮化镓器件与集成电路等领域持续开拓创新。
联系方式
- 公司地址:珠海市高新区金园二路39号