东莞招聘

Job description:

This contributor will work on process development to power devices fabricated on GaN-on-Si technology.

The job responsibilities include:

1. Process development to GaN-on-Si technology

2. Transfer R&D process to mass fabrication

3. Improve GaN-on-Si process stability and manufacturability

4. Improve GaN-on-Si yield and reliability

5. Working with R&D engineer, integration engineer, yield engineer and manufacturing

Minimum Requirements:

Minimum master and above degree in Materials Science, Electrical Engineering, Chemical Engineering, Mechanical Engineering, Physics, Chemistry or a related engineer discipline

Preferred Qualifications and Skills:

1. Deep understanding of power device physics

2. Solid technical understanding of IC processing equipment, integrated flow, chemistry and physics

3. Strong knowledge of Statistical Process Control (SPC) and Design of Experiments (DOE) principles

4. Hands-on participation and a strong sense of ownership

5. Demonstrated ability to work within schedule constraints

6. Excellent communication and team skills

7. Technical documentation experience

英诺赛科（珠海）科技有限公司一期项目坐落于珠海市国家高新区，拥有中国首条 8 英寸硅基氮化镓外延与芯片大规模量产生产线。
公司成立于 2015 年 12 月，由海归团队发起，主要业务为第三代半导体电力电子器件研发和生产。当前产品涵盖 30V-650V 氮化镓功率器件及 5G 射频器件，产品设计及性能均已达到国际先进水平。
此外，公司与欧洲微电子所（IMEC）、香港科技大学、电子科技大学等海内外科研机构、高 校已建立长期合作关系，在氮化镓外延生长、制造、可靠性、氮化镓器件与集成电路等领域持续开拓创新。