RF Application Engineer(职位编号：11780579)
飞思卡尔半导体(中国)有限公司上海分公司
- 公司性质：外资(欧美)
- 公司行业：电子技术/半导体/集成电路
职位信息
- 发布日期：2013-03-26
- 工作地点：上海-浦东新区
- 招聘人数：若干
- 工作经验：五年以上
- 学历要求：硕士
- 职位类别：射频工程师
职位描述
Description:
Department description
The RF division (RFD) is the global leader for RF power semiconductor solutions for the wireless infrastructure equipment market. The division designs high-power RF LDMOS and GaAs discrete transistors, RFIC's and modules for infrastructure applications, ISM (industrial scientific and medical), Avionics, Pulsed radar, and Broadcast markets. Freescale semiconductor, inc. is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. Freescale became an independent company in July 2004 after more than 50 years as part of Motorola, inc. Freescale's RF division is based in Tempe, Arizona, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale is the third largest independent semiconductor company in the U.S. for more information on Freescale visit www.freescale.com and for more details of the high power RF solutions provided by Freescale visit www.freescale.com/rfpower.
Scope of responsibilities/expectations
The main responsibility of this position is to provide technical support to key customers which will facilitate the smooth transition of FSL RF power products into new RF power amplifier designs. This involves working directly with both customers and Freescale's internal design teams to optimize Freescale's current RF power products for specific customer applications. Product performance must be demonstrated to customers through detailed device characterizations using loadpull and conventional RF test equipment and through the design of custom demonstration test circuits. demonstration circuits will incorporate modern system architectures including high efficiency techniques like Doherty combining, linearity enhancement techniques like analog pre-distortion (APD) and digital pre-distortion (DPD) and combining multiple stages of power blocks to show system level performance. Additional responsibilities include driving new technology development within the RF division to align future high power RF power products with customer needs / expectations. This requires setting design target specifications and working with the new product introduction teams to ensure all device performance requirements are clearly understood and the new products will meet the system specifications of key customers.
Qualifications:
Specific knowledge/skills
Candidate of a BS will need to hold a minimum degree, MS preferred, in electrical engineering with in excess of 5 years relevant work experience. Direct experience in designing high-power RF transistor internal-matching networks using LDMOS, or direct experience working with high power RF products at the RF system level is desired.
The applicant must have a strong background on microwave and RF engineering, and emphasis on one or several of the following areas is highly desirable:
- Hands-on experience with board level tuning and optimization of matching networks.
- High level of experience and understanding of power amplifier, circuit linearization and high-efficiency design techniques.
- Microwave measurement techniques (s-parameters, loadpull setups, VNA calibration techniques, spectrum analyzers, power meters, etc).
- Understanding and development of advanced RF/microwave measurement techniques
- Working knowledge with Agilent's advanced design system (ads) and planar electromagnetic solvers (sonnet's EM and/or Agilent's momentum) understanding of wireless communication systems and their latest trends in the industry.
- Solid understanding concerning circuit instability and strategies to resolve them.
- Strong written and verbal communication skills and ability to work in teams.
- Ability to thrive in a dynamic environment with a high level of personal drive and energy is highly desirable.